C106B DATASHEET PDF

Device Marking: Device Type, e.g., CB, Date Code. MAXIMUM RATINGS (TJ .. “Typical” parameters which may be provided in SCILLC data sheets and/or. Datasheet. Pin Out. TO AA. CASE 77 Peak Repetitive Off-State Voltage ( Note 1). (TJ = 25 to °C, Gate Open). CB. VDRM,. VRRM. V. CD. Unit. Peak Repetitive Forward and Reverse Blocking Voltage(1). (RGK = 1 kΩ). CF. (TC = –40° to °C). CA. CB. CD. CM. VDRM or. VRRM.

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Forward Average Gate Power.

CB Datasheet PDF – ON Semiconductor

Mounting Torque Note 2. ON Semiconductor C Package. Mounting torque dagasheet excess of 6 in. Pulse Width v 1. Mounting torque in excess of 6 in.

Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Preferred devices are recommended choices for future use. Anode lead datasehet heatsink contact pad are common. Peak Non-Repetitive Surge Current.

Typical Latching Current versus Junction Temperature http: Glassivated PNPN devices designed for high volume consumer. The dimensional diagrams below compare the critical dimensions of the ON Semiconductor. Forward Peak Gate Current. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications.

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SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and datasneet disclaims any and all liability, including without limitation special, consequential or incidental damages.

Typical Holding Current versus Junction Temperature 1. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the datashdet.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application datashset which the failure of the SCILLC product could create a situation where personal injury or death may datzsheet. It has been demonstrated that the smaller dimensions of the ON Semiconductor package dagasheet it compatible in most lead-mount and chassis-mount dataxheet.

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Sensitive Gate Silicon Controlled Rectifiers. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Maximum On—State Power Dissipation http: C package with competitive devices. CF1 – Silicon Controlled Rectifiers. Operating Junction Temperature Range. High Heat Dissipation and Durability. Forward Peak Gate Power. It has been demonstrated that the smaller dimensions of.

Documents Flashcards Grammar checker. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. The user is advised to compare all critical dimensions for mounting compatibility.

C – Silicon Controlled Rectifiers. The user is advised to compare all critical dimensions for mounting compatibility.

C106B PDF Datasheet浏览和下载

March, — Rev. C Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important.

Anode lead and heatsink contact pad are common. Torque rating applies with use of compression washer BF